absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter FQPF2N80YDTU unit v dss drain-source voltage 800 v i d drain current - continuous (t c = 25c) 1.5 a - continuous (t c = 100c) 0.95 a i dm drain current - pulsed (note 1) 6.0 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 5.2 mj i ar avalanche current (note 1) 1.5 a e ar repetitive avalanche energy (note 1) 3.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25c) 35 w - derate above 25c 0.28 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter unit r jc thermal resistance, junction-to-case , max. 3.57 c / w r ja thermal resistance, junction-to-ambient , max. 62.5 c / w july 2013 FQPF2N80YDTU n-channel qfet ? mosfet 8 0 v, 1.5 a, ? description features this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. ? 1.5 a, 8 0 v, r ds(on) = ?(max.)@v gs =10 v , i d =0.75 a ? low gate charge (typ. 12 nc) ? low c rss (typ. 5.5 pf) ? 100% avalanche tested fqpf2 18 ydtu n-channel qfet ? mosfet ?20 13 fairchild semiconductor corporation fqpf2n80 ydtu rev. c1 www.fairchildsemi.com g s d FQPF2N80YDTU
( n ote 4) ( note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 4.3mh, i as = 1.5a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 2.4a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. essentially independent of operating temperature symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 800 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.9 -- v/c i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 10 a v ds = 640 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 0.75 a -- 4.9 6.3 ? g fs forward transconductance v ds = 50 v, i d = 0.75 a -- 2.2 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 425 550 pf c oss output capacitance -- 45 60 pf c rss reverse transfer capacitance -- 5.5 7.0 pf switching characteristics t d(on) turn-on delay time v dd = 400 v, i d = 2.4 a, r g = 25 ? -- 12 35 ns t r turn-on rise time -- 30 70 ns t d(off) turn-off delay time -- 25 60 ns t f turn-off fall time -- 28 65 ns q g total gate charge v ds = 640 v, i d = 2.4 a, v gs = 10 v -- 12 15 nc q gs gate-source charge -- 2.6 -- nc q gd gate-drain charge -- 6.0 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 1.5 a i sm maximum pulsed drain-source diode forward current -- -- 6.0 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.5 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 2.4 a, di f / dt = 100 a/ s -- 480 -- ns q rr reverse recovery charge -- 2.0 -- c fqpf2 180ydtu n-channel qfet ? mosfet ?2013 fair c hild semiconduc tor corporation fqp f2n80y dtu rev. c1 www.fairchildsemi.com
0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0123456 2 4 6 8 10 12 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 24681 0 10 -1 10 0 150 o c 25 o c -55 o c notes : 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v note : i d = 2.4a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 c iss = c gs + c gd (c ds = shorted) c os s = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics fqpf2 18 ydtu n-channel qfet ? mosfet ?2013 fairchild semiconductor corporation fqp f2n80y dtu rev. c1 www.fairchildsemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n ote s : 1. z jc (t) = 3.57 /w m ax. 2. d u ty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q u are w ave p u lse d ura tion [sec] 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 1.2 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 11. transient thermal response curve t 1 p dm t 2 fqpf2 18 ydtu n-channel qfet ? mosfet ?2013 fairchild semiconductor corporation fqp f2n80y dtu rev. c1 www.fairchildsemi.com
charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fqpf2 18 ydtu n-channel qfet ? mosfet ?2013 fairchild semiconductor corporation fqp f2n80y dtu rev. c1 www.fairchildsemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- fqpf2 18 ydtu n-channel qfet ? mosfet ?2013 fairchild semiconductor corporation fqp f2n80y dtu rev. c1 www.fairchildsemi.com
fqpf2 18 ydtu n-channel qfet ? mosfet mechanical dimensions dimensions in millimeters to220 q03 ?2013 fairchild semiconductor corporation FQPF2N80YDTU rev. c1 www.fairchildsemi.com to-220f 3l - to220, molded, 3ld, full pack, eiaj sc91, y formed lead package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to verify or obtain the most recent revision. package specifications do not expand the terms of fairchilds worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tf220-fa3
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